Ceramic Materials
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Aluminum nitride ceramic sheets
Aluminum nitride ceramic substrates are a novel substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new type of substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a novel substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new class of substrate materials. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new class of substrate materials. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new type of substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.