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Aluminum nitride powder, as a novel material, exhibits excellent thermal conductivity, low dielectric loss and dielectric constant, as well as reliable electrical insulation properties.
Aluminum nitride powder, as a novel material, exhibits excellent thermal conductivity, low dielectric loss and dielectric constant, as well as reliable electrical insulation properties.
Aluminum nitride powder, as a novel material, exhibits excellent thermal conductivity, low dielectric loss and dielectric constant, as well as reliable electrical insulation properties.
The hydrolysis-resistant treatment of AlN powders primarily involves chemically bonding or physically adsorbing a coating or a thin reaction layer onto the surface of the AlN particles, thereby inhibiting the hydrolysis reaction between the AlN powder and water.
Aluminum nitride granulated powder is produced via spray granulation of ultrafine powders, resulting in pseudo-spherical particles. It contains binders and sintering aids, exhibiting excellent flowability and ensuring complete die filling. The green bodies formed by pressing are free of defects and exhibit uniform density, making this powder an ideal raw material for dry pressing, semi-dry pressing, and cold isostatic pressing processes.
Aluminum nitride granulated powder is produced via spray granulation of ultrafine powders, resulting in pseudo-spherical particles. It contains binders and sintering aids, exhibiting excellent flowability and ensuring complete die filling. The green bodies formed by pressing are free of defects and exhibit uniform density, making it an ideal raw material for dry pressing, semi-dry pressing, cold isostatic pressing, and other processes.
Aluminum nitride granulated powder is produced via spray granulation of ultrafine powders, resulting in pseudo-spherical particles. It contains binders and sintering aids, exhibiting excellent flowability and ensuring complete die filling. The green bodies formed by pressing are free of defects and exhibit uniform density, making it an ideal raw material for dry pressing, semi-dry pressing, cold isostatic pressing, and other processes.
Aluminum nitride ceramic substrates are a novel substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new type of substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a novel substrate material. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new class of substrate materials. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.
Aluminum nitride ceramic substrates are a new class of substrate materials. The lattice constants of aluminum nitride crystals are a = 0.3110 nm and c = 0.4890 nm, with a hexagonal crystal structure. As a wurtzite-type covalent compound based on an aluminum nitride tetrahedral structural unit, it exhibits excellent thermal conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, non-toxicity, and a thermal expansion coefficient that matches that of silicon—among other outstanding properties. Consequently, it is regarded as an ideal material for next-generation high-integration semiconductor substrates and electronic packaging.